UPS IGBT
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IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30F124 TO220F 600V 200A IGBT MOSFET
The GT30F124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with a 600V voltage rating and 200A current capacity. Ideal for motor drives, inverters, and power supplies, it offers low conduction losses, fast switching, and excellent thermal management.
SKU: 2001790 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30J127 TO220F 600V 200A IGBT MOSFET
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
SKU: 2001791 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30G124 TO220F 600V 200A IGBT MOSFET
The GT30G124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with low conduction losses, fast switching, and high current handling. Ideal for motor drives, inverters, and power supplies, it ensures efficient power conversion and thermal management in demanding applications.
SKU: 2001792 -
IGBT, Semiconductors, Transistors
GT30J124 TO220F IGBT
The GT30J124 TO220F 600V 200A IGBT MOSFET is a high-performance power transistor designed for use in motor drives, inverters, and power supplies. With fast switching, low conduction losses, and a high current rating of 200A, it provides energy-efficient power conversion for demanding industrial and automotive applications.
SKU: 2001794 -
IGBT, Semiconductors, Transistors
GT30F126 TO220F 600V 200A Igbt MOSFET
The GT30F126 TO220F 600V 200A IGBT MOSFET is a high-performance, energy-efficient power switching device designed for use in motor drives, inverters, and power converters. With fast switching speeds, low conduction losses, and a high current rating of 200A, it is perfect for demanding industrial and automotive applications.
SKU: 2001793 -
IGBT, Semiconductors, Transistors
H20R1202 TO247 1200V 20A IGB with Monolithic Body Diode
The H20R1202 TO247 1200V 20A IGBT with Monolithic Body Diode is a high-voltage, high-current IGBT designed for efficient switching in motor drives, inverters, power supplies, and renewable energy systems. It features a Monolithic Body Diode for fast recovery and protection, ensuring reliable operation in demanding power applications.
SKU: 2001804
7N60 TO-220 7A 600V N-Channel Power MOSFET
PIC12F629 8BIT CMOS Microcontroller
D669 TO-126 Normal Quality NPN Transistor 180V 3A
12VDC 50LED String Warm White - Total Length is ~31 feet (~9.5m) Gap Between Two LED is 20cm
0.8mm 50g Soldering Lead Wire Roll
5.5X2.1mm Type-C DC Female Jack
TL071CP DIP 6V 100mA Operational Amplifier
SN7417 DIP Hex Buffer/Driver with 15V Open Collector Output
MCR100-6 TO92 400V 1A Thyristor
Multi-Functional Crimping Lug Tool
J5019 DC TO DC Step-Up 1A Buck Boost Module for 18650 TP4056 3.7V to 4.3-27V
0.33UF / 330nf 50V Original Tantalum Capacitor
GT30F126 TO220F 600V 200A Igbt MOSFET 




