UPS IGBT
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IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30F124 TO220F 600V 200A IGBT MOSFET
The GT30F124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with a 600V voltage rating and 200A current capacity. Ideal for motor drives, inverters, and power supplies, it offers low conduction losses, fast switching, and excellent thermal management.
SKU: 2001790 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30J127 TO220F 600V 200A IGBT MOSFET
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
SKU: 2001791 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30G124 TO220F 600V 200A IGBT MOSFET
The GT30G124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with low conduction losses, fast switching, and high current handling. Ideal for motor drives, inverters, and power supplies, it ensures efficient power conversion and thermal management in demanding applications.
SKU: 2001792 -
IGBT, Semiconductors, Transistors
GT30J124 TO220F IGBT
The GT30J124 TO220F 600V 200A IGBT MOSFET is a high-performance power transistor designed for use in motor drives, inverters, and power supplies. With fast switching, low conduction losses, and a high current rating of 200A, it provides energy-efficient power conversion for demanding industrial and automotive applications.
SKU: 2001794 -
IGBT, Semiconductors, Transistors
GT30F126 TO220F 600V 200A Igbt MOSFET
The GT30F126 TO220F 600V 200A IGBT MOSFET is a high-performance, energy-efficient power switching device designed for use in motor drives, inverters, and power converters. With fast switching speeds, low conduction losses, and a high current rating of 200A, it is perfect for demanding industrial and automotive applications.
SKU: 2001793 -
IGBT, Semiconductors, Transistors
H20R1202 TO247 1200V 20A IGB with Monolithic Body Diode
The H20R1202 TO247 1200V 20A IGBT with Monolithic Body Diode is a high-voltage, high-current IGBT designed for efficient switching in motor drives, inverters, power supplies, and renewable energy systems. It features a Monolithic Body Diode for fast recovery and protection, ensuring reliable operation in demanding power applications.
SKU: 2001804
BDX34C TO220 -100V -10A PNP Power Transistors
Attiny85 Micro USB General Development Board
TAS5717 QFP 10W/15W Digital Audio Power Amplifier IC with Integrated Cap-Free HP Amplifier
CD4098 DIP CMOS DUAL MONASTABLE MULTIVIBRATOR
TNY276PN DIP - SMPS Tiny Switch-II Off-Line Switcher IC
2SC1845 TO92 120V 50mA NPN Transistor
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8 Way 8 Channel 10A 12VDC Relay Module with Opto Isolated High & Low Trigger With Screw Terminal
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OP07CDR DIP 3-18VDC Operational Amplifier
78L12 TO92 35V 150mA Voltage Regulator
BAT54A KL2 SOT23 30V 200mA Schottky Barrier Diode
25.000MHz / 25Mhz Crystal 2 Pin THD
2SC5198 TO-3P 140V 70W NPN Power Transistor
LM358 SOP / SMD Dual Operational Amplifier IC
7924 TO-220 Negative Fixed Voltage Regulator
B1375 TO-220F PNP Power Transistor
RF-Nano For Arduino Nano V3.0 ATMEGA328P QFN32 5V 16M CH340 Integrate NRF24L01+2.4G Wireless
GT30J127 TO220F 600V 200A IGBT MOSFET 




