UPS IGBT
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IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30F124 TO220F 600V 200A IGBT MOSFET
The GT30F124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with a 600V voltage rating and 200A current capacity. Ideal for motor drives, inverters, and power supplies, it offers low conduction losses, fast switching, and excellent thermal management.
SKU: 2001790 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30J127 TO220F 600V 200A IGBT MOSFET
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
SKU: 2001791 -
IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30G124 TO220F 600V 200A IGBT MOSFET
The GT30G124 TO220F 600V 200A IGBT MOSFET is a high-power switching device with low conduction losses, fast switching, and high current handling. Ideal for motor drives, inverters, and power supplies, it ensures efficient power conversion and thermal management in demanding applications.
SKU: 2001792 -
IGBT, Semiconductors, Transistors
GT30J124 TO220F IGBT
The GT30J124 TO220F 600V 200A IGBT MOSFET is a high-performance power transistor designed for use in motor drives, inverters, and power supplies. With fast switching, low conduction losses, and a high current rating of 200A, it provides energy-efficient power conversion for demanding industrial and automotive applications.
SKU: 2001794 -
IGBT, Semiconductors, Transistors
GT30F126 TO220F 600V 200A Igbt MOSFET
The GT30F126 TO220F 600V 200A IGBT MOSFET is a high-performance, energy-efficient power switching device designed for use in motor drives, inverters, and power converters. With fast switching speeds, low conduction losses, and a high current rating of 200A, it is perfect for demanding industrial and automotive applications.
SKU: 2001793 -
IGBT, Semiconductors, Transistors
H20R1202 TO247 1200V 20A IGB with Monolithic Body Diode
The H20R1202 TO247 1200V 20A IGBT with Monolithic Body Diode is a high-voltage, high-current IGBT designed for efficient switching in motor drives, inverters, power supplies, and renewable energy systems. It features a Monolithic Body Diode for fast recovery and protection, ensuring reliable operation in demanding power applications.
SKU: 2001804
LM337T TO220 1.2-37V 1.5A Adjustable Voltage Regulator
XH-M542 TPA3116 100W Mono Digital Power Amplifier
2kOhm / 2kR PT15 Vertical Preset
IPP120N06N / 120N06 TO-220 60V 70A N-Channel MOSFET
16 CH / Channel 10A 5VDC Relay Module With Opto Isolation
C1675 TO-92 Silicon Epitaxial Planar Transistor
9575 TO-252 P-Channel 40 V (D-S) MOSFET
180uF 35V Electrolytic Capacitor
DC Jack Male
CD7388 DIP Original Five Preset Mode Equalizer Circuit IC
Banana Socket Female Short Black 4mm BS-5-04
K40H1203 TO-247 ORIGINAL1200V High Speed Switching IGBT 




