IRG71C28U TO-220F Original 600V 25A PDP Trench IGBT

Product Description: IRG71C28U TO220F Original 600V 25A PDP Trench IGBT

The IRG71C28U TO220F Original 600V 25A PDP Trench IGBT would typically be a high-performance insulated gate bipolar transistor (IGBT) designed for use in plasma display panels (PDPs) and other applications requiring efficient power handling. It features a TO220F package, which is a surface-mount version of the TO220 package, offering good thermal dissipation and compact design. This IGBT is likely an N-channel device, optimized for sustain and energy recovery circuits in PDP applications.

Features:

• Type: N-Channel IGBT.
• Package Type: TO220F.
• Maximum Collector-Emitter Voltage (Vce): 600V.
• Maximum Collector Current (Ic): 25A.
• Collector-Emitter Saturation Voltage (VCEsat): Typically around 1.7V to 1.95V.
• Maximum Gate-Emitter Voltage (Vge): Typically ±20V.
• Maximum Junction Temperature (Tj): 150°C.
• Applications: Suitable for plasma display panels, inverters, and other high-power switching applications.

Application:
This IGBT is commonly used in plasma display panels, inverters, and other high-power switching circuits where efficient power handling and reliable switching are required.

Package Included:
1 x IRG71C28U TO220F Original 600V 25A PDP Trench IGBT
Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance.!