C102 TO92 Epitaxial Planar NPN Transistor

Product Description: C102 TO92 Epitaxial Planar NPN Transistor

Key Features:

• Type: The C102 is a NPN bipolar junction transistor (BJT), designed for high voltage applications.
• Package Type: It comes in a TO-92 plastic package, which is compact and suitable for various electronic circuits.
• Material: Made from silicon (Si), ensuring reliable performance and durability.
• Maximum Collector Power Dissipation: Up to 0.25W, allowing it to handle moderate power levels efficiently.
• Collector-Base Voltage (Maximum): Rated at 30V, making it suitable for applications requiring a higher voltage.
• Collector Current (Maximum): Supports a maximum collector current of 0.05A, ideal for low to moderate current applications.
• Operating Junction Temperature (Maximum): Can operate up to 150°C, providing robustness in high-temperature environments.
• Forward Current Transfer Ratio (hFE): Minimum value of 13, indicating good amplification capability.
• Transition Frequency (fT): Approximately 0.8MHz, suitable for general switching applications.

Application:

The C102 TO92 NPN transistor is widely used in:

• Switching Applications: Ideal for use in relay drivers and switching circuits.
• Amplifier Circuits: Suitable for audio and radio frequency amplification.
• Signal Processing: Commonly found in signal processing circuits where reliable amplification is required.

Pin Configuration:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Package Included: 1 x C102 TO92 Epitaxial Planar NPN Transistor. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!