2N5551 TO-92 High Voltage Switching Transistor

Product Description: 2N5551 TO-92 NPN Transistor
The 2N5551 is a high-voltage NPN bipolar junction transistor designed for general-purpose applications, including switching and amplification. Housed in the TO-92 package, it is suitable for various electronic circuits requiring reliable performance.

Features

• NPN Configuration: The 2N5551 operates as an NPN transistor, allowing for effective current amplification.
• Voltage Ratings:
  Maximum Collector-Emitter Voltage (VCE): 160V
  Maximum Collector-Base Voltage (VCB): 180V
  Maximum Emitter-Base Voltage (VEB): 6V
• Current Handling Capability:
  Maximum Collector Current (IC): 600mA
• Power Dissipation:
  Maximum Power Dissipation (PD): Approximately 625mW.
• Gain Characteristics:
  DC Current Gain (hFE): Typically around 80 at a collector current of 10mA.
• Transition Frequency:
  Transition Frequency (ft): Approximately 100 MHz, making it suitable for RF applications.

Applications
The 2N5551 TO-92 is utilized in various applications:

• Amplification: Ideal for low to medium power audio and signal amplification circuits.
• Switching Applications: Suitable for controlling loads in various electronic devices.
• General Purpose Electronics: Effective in a variety of circuits including signal processing and control applications.

Pin Configuration
The 2N5551 comes in a TO-92 package with the following pin configuration:
Pin Number Pin Name Description
1 Emitter Current drains out through this pin, typically connected to ground.
2 Base Controls the biasing of the transistor, used to turn ON or OFF the transistor.
3 Collector Current flows into this pin, typically connected to the load.

Package Included:
1 x 2N5551 TO-92 NPN Transistor. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!