Showing all 12 results
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
The 24N60 is a high-voltage, N-channel MOSFET suitable for power switching applications. It offers high voltage capability, moderate current handling, and fast switching speed. Its TO-220 package enables easy integration into various circuit designs.
The 38N60 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
H20R1202 TO247 1200V 20A IGB with Monolithic Body Diode 
D882 TO-126 NPN Silicon Power Transistor 
GT30J127 TO220F 600V 200A IGBT MOSFET 
