2000510

SPP24N60C3 TO220 600V 24A N- CHANNEL MOSFET

Availability:

5 in stock


The 24N60 is a high-voltage, N-channel MOSFET suitable for power switching applications. It offers high voltage capability, moderate current handling, and fast switching speed. Its TO-220 package enables easy integration into various circuit designs.

රු545.00

5 in stock

The 24N60 is a high-voltage, N-channel power MOSFET packaged in a TO-220 package. It’s designed for applications requiring high voltage switching and moderate current handling capabilities. This MOSFET is widely used in various power electronic circuits, including switching power supplies, motor control systems, and inverter circuits.

Key Features:

  • High Voltage Rating: Capable of handling up to 600V drain-source voltage, making it suitable for high-voltage applications.
  • Moderate Current Handling: Can handle up to 24A continuous drain current.
  • Low On-Resistance (RDS(on)): Offers relatively low on-resistance, reducing power dissipation during conduction.
  • Fast Switching Speed: Provides quick switching times, improving efficiency and reducing switching losses.
  • Robust Design: Built to withstand high voltage transients and thermal stress.
  • TO-220 Package: A common and versatile package that offers good thermal performance and ease of mounting.

Applications:

  • Switching Power Supplies: Used in various power supply typologies, including buck, boost, and buck-boost converters.
  • Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors.
  • Inverter Circuits: Utilized in inverter designs for converting DC power to AC power.
  • Charger Circuits: Found in battery charging circuits for various electronic devices.

Package Included

1 x SPP24N60C3 TO220 600V 24A N- CHANNEL MOSFET

“Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance.”

SKU: 2000510 Category: Tags: , , , , ,
  • Voltage Rating: 600V (VDS)
  • Current Rating: 24A (ID)
  • On-Resistance (RDS(on)): Typically 168 mΩ (varies by manufacturer)
  • Gate Charge (Qg): Typically 29 nC
  • Input Capacitance (Ciss): Typically 180 pF
  • Reverse Recovery Time (trr): Typically 40 ns
  • Package: TO-220

Other Important Specifications:

  • Operating Junction Temperature Range: -55°C to +150°C
  • Storage Temperature Range: -55°C to +150°C
  • Thermal Resistance, Junction-to-Case (RthJC): Typically 4.2°C/W

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