K40H1203 TO-247 ORIGINAL1200V High Speed Switching IGBT

Product Description: K40H1203 TO247 Original 1200V High Speed Switching IGBT
The K40H1203 TO247 Original 1200V High Speed Switching IGBT is a high-performance insulated gate bipolar transistor (IGBT) designed for use in high-speed switching applications. It features a TO-247 package, which provides excellent thermal dissipation, and is part of the IKW40N120H3 series. This IGBT utilizes Trench and Fieldstop technology, offering very low VCE(sat) and low EMI characteristics. It includes a soft, fast recovery anti-parallel diode, making it suitable for applications requiring efficient power handling and reliable switching.

Features:

• Type: N-Channel IGBT with anti-parallel diode.
• Package Type: TO-247.
• Maximum Collector-Emitter Voltage (Vce): 1200V.
• Maximum Collector Current (Ic): 80A.
• Maximum Pulsed Collector Current (Icm): 160A.
• Collector-Emitter Saturation Voltage (VCEsat): 2.05V (typical).
• Maximum Gate-Emitter Voltage (Vge): 20V.
• Gate Charge (Qg): 185nC (typical).
• Maximum Junction Temperature (Tj): 175°C.
• Applications: Suitable for high-speed switching applications, frequency converters, uninterruptible power supplies (UPS), and industrial power control systems.

Application:
This IGBT is commonly used in high-speed switching circuits, frequency converters, UPS systems, and industrial power control systems where efficient power handling and reliable switching are required.

Package Included:
1 x K40H1203 TO247 Original 1200V High Speed Switching IGBT
Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance.!