IRF530 TO-220 N – Channel Enhancement MOSFET

Product Description: IRF530 TO220
The IRF530 is a high-performance N-channel MOSFET designed for high-speed and high-power applications. Housed in the TO-220 package, it is suitable for various industrial and commercial applications due to its efficiency, low on-resistance, and robust performance.

Features

N-Channel Configuration: The IRF530 is configured as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
High Voltage Ratings:
Maximum Drain-Source Voltage (VDS): 100V
Maximum Gate-Source Voltage (VGS): ?20V
Current Handling Capability:
Continuous Drain Current (ID): 14A
Pulsed Drain Current (IDM): Up to 56A
Power Dissipation:
Maximum Power Dissipation (PD): 79W
Low On-State Resistance:
RDS(on) at VGS = 10V: Approximately 0.16?, which minimizes power loss during operation.
Fast Switching Speed:
Rise Time (tr): Approximately 34 ns
Fall Time (tf): Approximately 24 ns

Applications
The IRF530 TO220 is utilized in various applications:

Switching Power Supplies: Ideal for use in switch-mode power supplies (SMPS) where efficient power conversion is required.
Motor Control Circuits: Commonly used in motor drivers to control speed and torque.
DC-DC Converters: Suitable for applications requiring efficient voltage regulation.
General Power Switching Applications: Effective in a variety of high-current switching applications, including relay drivers and solenoid drivers.

Package Included:
1 x IRF530 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!