IRF1010 TO-220 N-Channel Power MOSFET

Product Description: IRF1010 TO220
The IRF1010 is a high-performance N-channel HEXFET power MOSFET designed for various applications, particularly in power switching. Housed in the TO-220 package, it is suitable for a wide range of industrial and commercial uses due to its efficiency and reliability.

Features

• N-Channel Configuration: The IRF1010 is configured as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
• High Voltage Ratings:
  Maximum Drain-Source Voltage (VDS): 60V
  Maximum Gate-Source Voltage (VGS): ?20V
• Current Handling Capability:
  Continuous Drain Current (ID): 84A
  Pulsed Drain Current (IDM): Up to 330A
• Power Dissipation:
  Maximum Power Dissipation (PD): 200W
• Low On-State Resistance:
  RDS(on) at VGS = 10V: Approximately 12 m?, which minimizes power loss during operation.
• Fast Switching Speed:
  Gate Charge (Qg): Approximately 130 nC, enabling rapid switching capabilities.

Applications
The IRF1010 TO220 is utilized in various applications:

• Switching Power Supplies: Ideal for use in switch-mode power supplies (SMPS) where efficient power conversion is required.
• Motor Control Circuits: Commonly used in motor drivers to control speed and torque.
• Lighting Systems: Suitable for applications requiring efficient dimming and control of lighting systems.
• General Power Switching Applications: Effective in a variety of high-current switching applications, including PWM applications and relay drivers.

Package Included:
1 x IRF1010 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!