HY3506 TO-220 N-Channel Enhancement Mode MOSFET

Product Description: HY3506 TO220
The HY3506 is a high-performance N-channel enhancement mode MOSFET designed for various applications, particularly in power management and switching. Housed in the TO-220 package, it is suitable for high-current applications due to its robust specifications.

Features

• N-Channel Configuration: The HY3506 is configured as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
• Voltage Ratings:
  Maximum Drain-Source Voltage (VDS): 60V
  Maximum Gate-Source Voltage (VGS): ?25V
• Current Handling Capability:
  Continuous Drain Current (ID): 190A
  Pulsed Drain Current (IDM): Higher ratings available depending on conditions.
• Power Dissipation:
  Maximum Power Dissipation (PD): Typically around 100W, subject to thermal management.
• Low On-State Resistance’s(on) at VGS = 10V: Approximately 3.5 m?, which minimizes power loss during operation.
• Thermal Characteristics:
  Maximum Junction Temperature (Tj): 175?C
  Storage Temperature Range: -55?C to +175?C

Applications
The HY3506 TO220 is utilized in various applications:

Power Management Systems: Ideal for use in power supply circuits where efficiency is crucial.
Switching Power Supplies: Commonly used in switch-mode power supplies (SMPS) for efficient power conversion.
Motor Control Circuits: Suitable for applications requiring high current handling and low on-resistance.
General Power Switching Applications: Effective in a variety of high-current switching scenarios.

Package Included:
1 x HY3506 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!