HY3410 TO-220 N-Channel Enhancement Mode MOSFET

Product Description: HY3410 TO220
The HY3410 is a high-performance N-channel MOSFET designed for power switching applications. Housed in the TO-220 package, it is suitable for various industrial and commercial applications due to its robust specifications.

Features

• N-Channel Configuration: The HY3410 is configured as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
• Voltage Ratings:
  Maximum Drain-Source Voltage (VDS): 100V
  Maximum Gate-Source Voltage (VGS): ?25V
• Current Handling Capability:
  Continuous Drain Current (ID): 140A
  Pulsed Drain Current (IDM): Higher ratings available depending on conditions.
• Power Dissipation:
  Maximum Power Dissipation (PD): 285W
• Low On-State Resistance:
  RDS(on) at VGS = 10V: Approximately 7.5 m?, which minimizes power loss during operation.
• Gate Threshold Voltage:
  VGS(th): Approximately 4V at 250 ?A.

Applications
The HY3410 TO220 is utilized in various applications:

• Synchronous Rectification: Ideal for use in power supply circuits where efficiency is crucial.
• Motor Control Circuits: Commonly used in motor drivers to control speed and torque effectively.
• Power Management Systems: Suitable for applications requiring high current handling and low on-resistance.
• General Power Switching Applications: Effective in a variety of high-current switching scenarios.

Package Included:
1 x HY3410 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!