BD139 TO-126 NPN Power Transistor

Product Description: BD139 TO-126 NPN Transistor
The BD139 is a medium-power NPN bipolar junction transistor designed for general-purpose applications, particularly in amplification and switching. Housed in the TO-126 package, it is suitable for a variety of electronic circuits.

Features

• NPN Configuration: The BD139 operates as an NPN transistor, allowing for effective current amplification.
• Voltage Ratings:
  Maximum Collector-Emitter Voltage (VCE): 80V
  Maximum Collector-Base Voltage (VCB): 80V
  Maximum Emitter-Base Voltage (VEBO): 5V
• Current Handling Capability: Maximum Collector Current (IC): 1.5A
• Power Dissipation: Maximum Power Dissipation (PD): Approximately 12.5W.
• Gain Characteristics: DC Current Gain (hFE): Ranges from 25 to 250, depending on the specific operating conditions.
• Transition Frequency: Transition Frequency (ft): Approximately 190MHz, making it suitable for RF applications.

Applications
The BD139 TO-126 is utilized in various applications:

• Amplification: Ideal for audio amplifiers and RF circuits where moderate power levels are required.
• Switching Applications: Suitable for high current switching tasks where load current can reach up to 1.5A.
• General Purpose Electronics: Effective in a variety of general-purpose electronic circuits, including signal processing and control applications.

Package Included:
1 x BD139 NPN Transistor TO-126 Package. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!