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BD137 TO-126 NPN Power Transistor

Availability:

19 in stock


The BD137 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 60V. With a maximum collector current rating of up to 1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.

රු15.00

19 in stock

Product Description: BD137 TO-126 NPN Transistor
The BD137 is a medium-power NPN bipolar junction transistor designed for general-purpose applications, particularly in amplification and switching. Housed in the TO-126 package, it is suitable for a variety of electronic circuits.

Features

  • NPN Configuration: The BD137 operates as an NPN transistor, allowing for effective current amplification.
  • Voltage Ratings:
  • Maximum Collector-Emitter Voltage (VCE): 60V
    Maximum Collector-Base Voltage (VCB): 60V
    Maximum Emitter-Base Voltage (VEB): 5V
  • Current Handling Capability: Maximum Collector Current (IC): 1.5A
  • Power Dissipation: Maximum Power Dissipation (PD): Approximately 12.5W.
  • Gain Characteristics: DC Current Gain (hFE): Ranges from 40 to 250, depending on the specific operating conditions.
  • Transition Frequency: Transition Frequency (ft): Approximately 50MHz, making it suitable for RF applications.

Applications
The BD137 TO-126 is utilized in various applications:

  • Amplification: Ideal for audio amplifiers and RF circuits where moderate power levels are required.
  • Switching Applications: Suitable for high current switching tasks where load current can reach up to 1.5A.
  • General Purpose Electronics: Effective in a variety of general-purpose electronic circuits, including signal processing and control applications.

Package Included:
1 x BD137 NPN Transistor TO-126 Package. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!

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