BD131 TO-126 Silicon Epitaxial Power Transistors

Product Description: BD131 TO-126 NPN Transistor
The BD131 is a high-performance NPN bipolar junction transistor designed for medium power applications. Housed in the TO-126 package, it is suitable for various electronic circuits requiring efficient switching and amplification.

Features

• NPN Configuration: The BD131 operates as an NPN transistor, allowing for effective current amplification.
• Voltage Ratings:
  Maximum Collector-Emitter Voltage (VCE): 45V
  Maximum Collector-Base Voltage (VCB): 70V
  Maximum Emitter-Base Voltage (VEB): 5V
• Current Handling Capability: Maximum Collector Current (IC): 3A
• Power Dissipation: Maximum Collector Power Dissipation (PC): 11W
• Gain Characteristics: DC Current Gain (hFE): Minimum of 40 at a collector current of 0.5A.
• Transition Frequency: Transition Frequency (ft): Approximately 60MHz, making it suitable for RF applications.

Applications
The BD131 TO-126 is utilized in various applications:

• Medium Power Amplifiers: Ideal for audio and RF amplifier circuits.
• Switching Applications: Suitable for high current switching tasks where load current can reach up to 3A.
• General Purpose Electronics: Effective in a variety of general-purpose electronic circuits, including signal processing and control applications.

Package Included:
1 x BD131 NPN Transistor TO-126 Package. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!