Product Description: 6N60 TO220 MOSFET
The 6N60 is a high-voltage N-channel MOSFET designed for power switching applications. Housed in the TO-220 package, it is suitable for various applications including power supplies, motor control, and other high-efficiency switching circuits.
Features
- N-Channel Configuration: The 6N60 operates as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
- Voltage Ratings:
Maximum Drain-Source Voltage (VDS): 600V
Maximum Gate-Source Voltage (VGS): ?30V - Current Handling Capability:
Maximum Drain Current (ID): 6.2A - Power Dissipation:
Maximum Power Dissipation (PD): Approximately 125W. - On-State Resistance:
RDS(on) at VGS = 10V: Typically around 1.2?. - Gate Threshold Voltage:
VGS(th): Typically ranges from 2V to 4V. - Thermal Characteristics:
Maximum Junction Temperature (Tj): 150?C.
Applications
The 6N60 TO220 is utilized in various applications:
- Power Supplies: Ideal for use in switch-mode power supplies where high efficiency is required.
- Motor Control Circuits: Suitable for controlling motors in various electronic devices.
- General Power Switching Applications: Effective in a variety of high-voltage switching scenarios.
Package Included:
1 x 6N60 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!
D789 TO92 Silicon NPN Epitaxial Transistor
AT93C46 DIP 1KBit I2C-Compatible, (2-Wire) Serial EEPROM 5.5V 2.0mA 




There are no reviews yet.