4N60 TO-220 4A 600V N-Channel Power MOSFET

Product Description: 4N60 TO220 MOSFET
The 4N60 is a high-voltage N-channel MOSFET designed for power switching applications. Housed in the TO-220 package, it is suitable for various applications including power supplies and motor control.

Features

• N-Channel Configuration: The 4N60 operates as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
• Voltage Ratings:
  Maximum Drain-Source Voltage (VDS): 600V
  Maximum Gate-Source Voltage (VGS): ?30V
• Current Handling Capability:
  Maximum Drain Current (ID): 4A
• Power Dissipation:
  Maximum Power Dissipation (PD): Approximately 33W.
• On-State Resistance:
  RDS(on) at VGS = 10V: Approximately 2.2?.
• Gate Threshold Voltage:
  VGS(th): Typically ranges from 2V to 4V.
• Thermal Characteristics:
  Maximum Junction Temperature (Tj): 150?C.

Applications
The 4N60 TO220 is utilized in various applications:

• Power Supplies: Ideal for use in switch-mode power supplies where high efficiency is required.
• Motor Control Circuits: Suitable for controlling motors in various electronic devices.
• General Power Switching Applications: Effective in a variety of high-voltage switching scenarios.

Package Included:
1 x 4N60 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!