The 2SD1509 TO126 NPN Transistor is a versatile silicon-based bipolar junction transistor designed for a variety of applications, including power amplification and switching. With a maximum collector-emitter voltage of 80V and a collector current rating of 2A, this transistor is well-suited for medium-power circuits. Packaged in a TO-220 format, it provides effective thermal management and facilitates easy integration into electronic designs.
Features:
- Type: NPN bipolar junction transistor (BJT).
- Voltage Ratings: Maximum collector-emitter voltage (VCE) of 80V and maximum collector-base voltage (VCB) of 100V.
- Current Rating: Capable of handling continuous collector current (IC) up to 2A, making it suitable for various applications.
- Power Dissipation: Maximum power dissipation of 40W, ideal for robust applications.
- Gain Characteristics: Forward current transfer ratio (hFE) typically ranging from 50 to 200, ensuring effective amplification.
- Transition Frequency: Transition frequency (fT) of up to 10 MHz, enabling high-speed switching capabilities.
- Operating Temperature: Designed to operate within a junction temperature range of -55°C to +150°C.
Applications:
The 2SD1509 TO126 transistor is commonly used in:
- Audio Amplifiers: Ideal for driving audio frequency power amplifiers and other audio applications.
- Switching Circuits: Suitable for relay drivers and various switching applications in consumer electronics.
- Power Management: Effective in power supply circuits requiring reliable performance under load conditions.
Package Included: 1 x 2SD1509 TO126 NPN Transistor 80V 2A. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!
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