The 2SD1415 TP220F NPN Transistor is a high-performance silicon-based bipolar junction transistor designed for power amplification and switching applications. With a maximum collector-emitter voltage of 100V and a collector current rating of 7A, this transistor is ideal for high-voltage and high-current circuits. Packaged in a TO-220 format, it ensures efficient thermal management and easy integration into various electronic designs.
Features:
- Type: NPN bipolar junction transistor (BJT).
- Voltage Ratings: Maximum collector-emitter voltage (VCE) of 100V and maximum collector-base voltage (VCB) of 120V.
- Current Rating: Capable of handling continuous collector current (IC) up to 7A, making it suitable for demanding applications.
- Power Dissipation: Maximum power dissipation of 40W, suitable for robust applications.
- Gain Characteristics: Forward current transfer ratio (hFE) typically ranging from 50 to 150, ensuring effective amplification.
- Transition Frequency: Transition frequency (fT) of up to 10 MHz, enabling high-speed switching capabilities.
- Operating Temperature: Designed to operate within a junction temperature range of -55°C to +150°C.
Applications:
The 2SD1415 TP220F transistor is commonly used in:
- Audio Amplifiers: Ideal for driving high-power audio frequency amplifiers and other audio applications.
- Switching Circuits: Suitable for relay drivers and various high-current switching applications in consumer electronics.
- Power Management: Effective in power supply circuits requiring reliable performance under load conditions.
Package Included: 1 x 2SD1415 TP220F NPN Transistor 100V 7A. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!
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