2SD1276-P TO-220F NPN 60V 4A Transistor

The 2SD1276-P TO220F NPN Transistor is a high-performance silicon-based bipolar junction transistor designed for power amplification and switching applications. With a maximum collector-emitter voltage of 60V and a collector current rating of 4A, this transistor is ideal for various electronic circuits requiring reliable performance under load. Packaged in a TO-220 format, it ensures efficient thermal management and ease of integration into electronic designs.

Features:

• Type: NPN bipolar junction transistor (BJT).
• Voltage Ratings: Maximum collector-emitter voltage (VCE) of 60V and maximum collector-base voltage (VCB) of 70V.
• Current Rating: Capable of handling continuous collector current (IC) up to 4A.
• Power Dissipation: Maximum power dissipation of 40W, suitable for high-power applications.
• Gain Characteristics: Forward current transfer ratio (hFE) typically ranging from 50 to 150, ensuring effective amplification.
• Transition Frequency: Transition frequency (fT) of up to 10 MHz, enabling high-speed switching capabilities.
• Operating Temperature: Designed to operate within a junction temperature range of -55°C to +150°C.

Applications:

The 2SD1276-P TO220F transistor is commonly used in:

• Audio Amplifiers: Ideal for driving audio frequency power amplifiers and other audio applications.
• Switching Circuits: Suitable for relay drivers and various high-current switching applications in consumer electronics.
• Power Management: Effective in power supply circuits requiring reliable performance under load.

Package Included: 1 x 2SD1276-P TO220F NPN Transistor 60V 4A. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!