2SC4137 TO-126 20V 100mA High Frequency Amplifier / RF Switching Transistor

Product Description: 2SC4137 TO126 20V 100MA High Frequency Amplifier / RF Switching Transistor

The 2SC4137 TO126 20V 100MA High Frequency Amplifier / RF Switching Transistor is a high-performance bipolar junction transistor (BJT) designed for use in high-frequency amplifiers and RF switching applications. It features a TO-126 package, which provides good thermal dissipation, and is an NPN transistor with a maximum collector-emitter voltage (Vce) of 20V and a maximum collector current (Ic) of 100mA. This transistor is suitable for applications requiring fast switching speeds and high gain, making it ideal for audio amplifiers and RF circuits.

Features:

• Type: NPN BJT.
• Package Type: TO-126.
• Maximum Collector-Emitter Voltage (Vce): 20V.
• Maximum Collector Current (Ic): 100mA.
• DC Current Gain (hFE): Minimum 560.
• Power Dissipation (Pd): Typically around 1W, but can vary (e.g., 4W for similar configurations).
• Operating Temperature Range: Not explicitly stated, but typically between -55°C to +150°C for similar BJTs.
• Applications: Suitable for high-frequency amplifiers, RF switching circuits, audio amplifiers, and high-gain applications.

Application:
This transistor is commonly used in high-frequency amplifiers, RF switching circuits, audio amplifiers, and high-gain applications where fast switching speeds and reliable operation are required.

Package Included:
1 x 2SC4137 TO126 20V 100MA High Frequency Amplifier / RF Switching Transistor
Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance.!