2N7000 TO92 60V 280mA N-Channel TMOS FET (MOSFET) Transistor

The 2N7000 is a widely used N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power switching applications. Encased in a TO-92 package, this MOSFET is ideal for controlling small loads or as a general-purpose switch in various electronic circuits.

Key Features:

• Type: N-channel MOSFET
• Voltage Rating (Vds): 60V maximum drain-to-source voltage
• Current Rating (Id): 280mA maximum drain current
• Gate Threshold Voltage (Vgs(th)): Typically between 1.0V and 3.0V, making it suitable for logic-level control
• Package: TO-92 (through-hole package)
• Low On-Resistance: Provides efficient switching with minimal power loss
• Fast Switching Speed: Suitable for high-speed switching applications
• Gate Control: Can be driven directly by logic-level voltages (e.g., 5V or 3.3V)

Applications:

• Switching circuits: Used as a low-power switch for low-voltage circuits, such as microcontrollers and sensors.
• Signal amplification: Can be used in signal switching and small amplification tasks.
• Power management: Suitable for low-current power regulation in portable devices or other low-power applications.

Benefits:

• Compact size: The TO-92 package allows for easy integration into space-constrained designs.
• Low Gate Drive Voltage: The 2N7000 requires a relatively low gate-source voltage to turn on, making it compatible with common logic circuits.

The 2N7000 is an ideal choice for applications where small size, efficient switching, and reliability are crucial.

Package Included:

• 1 x 2N7000 TO92 60V 280mA N-Channel MOSFET

Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance.

Choose the 2N7000 N-Channel MOSFET for efficient switching and reliable performance in your electronic designs!