2N5550 TO-92 NPN High-Voltage Transistor

Product Description: 2N5550 TO-92 NPN Transistor
The 2N5550 is a high-voltage NPN bipolar junction transistor designed for general-purpose applications, including switching and amplification. Housed in the TO-92 package, it is suitable for various electronic circuits requiring robust performance.

Features

• NPN Configuration: The 2N5550 operates as an NPN transistor, allowing for effective current amplification.
• Voltage Ratings:
  Maximum Collector-Emitter Voltage (VCE): 140V
  Maximum Collector-Base Voltage (VCB): 160V
  Maximum Emitter-Base Voltage (VEB): 6V
• Current Handling Capability: Maximum Collector Current (IC): 600mA
• Power Dissipation: Maximum Power Dissipation (PD): Approximately 625mW.
• Gain Characteristics: DC Current Gain (hFE): Typically ranges from 80 to 250, depending on the operating conditions.
• Transition Frequency: Transition Frequency (ft): Approximately 100 MHz, making it suitable for RF applications.

Applications
The 2N5550 TO-92 is utilized in various applications:

• Switching Applications: Ideal for low to medium power switching tasks in electronic devices.
• Amplification: Suitable for audio and signal amplification circuits.
• General Purpose Electronics: Effective in a variety of circuits including signal processing and control applications.

Pin Configuration
The 2N5550 comes in a TO-92 package with the following pin configuration:
Pin Number Pin Name Description
1 Collector Current flows into this pin, typically connected to the load.
2 Base Controls the biasing of the transistor, used to turn ON or OFF the transistor.
3 Emitter Current drains out through this pin, typically connected to ground.

Package Included:
1 x 2N5550 TO-92 NPN Transistor. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!