2N5401 TO-92 PNP Epitaxial Silicon Transistor

Product Description: 2N5401 TO-92 PNP Transistor
The 2N5401 is a high-voltage PNP bipolar junction transistor designed for general-purpose applications, including switching and amplification. It is housed in a TO-92 package, making it suitable for various electronic circuits.

Features

• PNP Configuration: The 2N5401 operates as a PNP transistor, allowing for effective current amplification in negative voltage applications.
• Voltage Ratings:
  Maximum Collector-Emitter Voltage (VCE): 150V
  Maximum Collector-Base Voltage (VCB): 160V
  Maximum Emitter-Base Voltage (VEB): 5V
• Current Handling Capability: Maximum Collector Current (IC): 600mA
• Power Dissipation: Maximum Power Dissipation (PD): Approximately 625mW.
• Gain Characteristics: DC Current Gain (hFE): Minimum of 60 at a collector current of 150mA.
• Transition Frequency: Transition Frequency (ft): Approximately 100 MHz, suitable for RF applications.

Applications
The 2N5401 TO-92 is utilized in various applications:

• Switching Applications: Ideal for low to medium power switching tasks in electronic devices.
• Amplification: Suitable for audio and signal amplification circuits.
• General Purpose Electronics: Effective in a variety of general-purpose electronic circuits, including signal processing and control applications.

Pin Configuration
The 2N5401 comes in a TO-92 package with the following pin configuration:
Pin Number Pin Name Description
1 Emitter Current flows into the device through this pin
2 Base Used for triggering the transistor ON and OFF
3 Collector Current flows out of this pin

Package Included:
1 x 2N5401 TO-92 PNP Transistor. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!