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2SD1138 TO220 Transistor, a high-quality silicon NPN triple diffused transistor designed for reliable performance in various electronic applications. With a voltage rating of 150V and a current capacity of 2A, this transistor is perfect for switching and amplification tasks.
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The A940 PNP Transistor TO-220 offers high current capacity and low saturation voltage, making it essential for audio amplification, vertical output applications, and various switching tasks.
The C1507 TO220 NPN Power Transistor is designed for high-efficiency power control, ideal for use in amplifiers, power supplies, and motor drives. With its excellent thermal performance and durable construction, it offers reliable operation in demanding applications.
The D880 TO220 is a powerful NPN transistor designed for audio amplification and switching applications. With a maximum collector current of 3A and robust thermal performance, it is perfect for driving motors and high-power circuits.
The HY1506 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability and excellent thermal performance, it is ideal for synchronous rectification, motor control circuits, and general-purpose applications.
The HY1906 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of 188W and excellent thermal performance, it is ideal for power management systems, synchronous rectification, and general-purpose applications.
The HY1908 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of around 150W and excellent thermal performance, it is ideal for power management systems, inverter circuits, and general-purpose applications.
The HY3410 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of 285W and excellent thermal performance, it is ideal for synchronous rectification, motor control circuits, and general-purpose applications.
The 120N04 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
The IRF1010 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 200W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF1404 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 333W and excellent thermal performance, it is ideal for DC to DC converters, power supplies, and motor driver circuits.
The?IRF1405 TO220?is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 330W and excellent thermal performance, it is ideal for automotive systems, power supplies, and motor control circuits.
The IRF3205 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 200W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and inverter applications.
The IRF530 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 79W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF640 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 125W and excellent thermal performance, it is ideal for power supplies, motor control, and general switching applications.
The IRF730 TO220 is a robust N-channel MOSFET designed for high-voltage applications. With a maximum power dissipation of 74W and excellent thermal performance, it is ideal for switched mode power supplies, motor control circuits, and general switching applications.
The IRF740 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 125W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
33UF 50V Original Tantalum Capacitor 
8N50 TO-220 8A 500V N-Channel Power MOSFET 
