Showing 1–25 of 31 results
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N80 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 800V. With a maximum power dissipation capability of approximately 94W and a drain current rating of up to 6A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 75N06 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
The 100N04 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
The 120N10 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 180N06 is a Low-voltage, High Current N-channel power MOSFET designed for efficient power switching applications. It offers a balance of Low voltage capability, moderate current handling, and fast switching speed.
The CS75N75 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 70N20 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 100N10 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 100N08 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
The 150N06 is a high-Current, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 55N06 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 70N10 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The 85N06 is a voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
The 90N10 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of high voltage capability, moderate current handling, and fast switching speed.
The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 120N04 is a high-voltage, N-channel power MOSFET designed for efficient power switching applications. It offers a balance of voltage capability, moderate current handling, and fast switching speed.
FQP85N06 / 85N06 TO-220 60V 85A N-Channel MOSFET 
FQP65N06 / 65N06 TO-220 60V 60A N-Channel MOSFET 
CS75N75 / 75N75 TO-220 75V 75A N-Channel MOSFET 
