600V MOSFET
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MOSFET Transistors, Semiconductors, Transistors
4N60 TO-220 4A 600V N-Channel Power MOSFET
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
SKU: 2000501 -
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IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30J127 TO220F 600V 200A IGBT MOSFET
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
SKU: 2001791