IRF640 TO-220 N-channel TrenchMOS MOSFET

Product Description: IRF640 TO220
The IRF640 is a high-performance N-channel power MOSFET designed for high-speed switching applications. Housed in the TO-220 package, it is suitable for various industrial and commercial applications due to its efficiency and reliability.

Features

• N-Channel Configuration: The IRF640 is configured as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
• High Voltage Ratings:
  Maximum Drain-Source Voltage (VDS): 200V
  Maximum Gate-Source Voltage (VGS): ?20V
• Current Handling Capability:
  Continuous Drain Current (ID): 18A
  Pulsed Drain Current (IDM): Up to 72A
• Power Dissipation:
  Maximum Power Dissipation (PD): 125W
• Low On-State Resistance:
  RDS(on) at VGS = 10V: Approximately 0.18?, which minimizes power loss during operation.
• Fast Switching Speed:
  Rise Time (tr): Approximately 60 ns
  Fall Time (tf): Approximately 35 ns

Applications
The IRF640 TO220 is utilized in various applications:

• Power Supplies: Ideal for use in switch-mode power supplies (SMPS) where efficient power conversion is required.
• Motor Control Circuits: Commonly used in motor drivers to control speed and torque.
• Lighting Control: Suitable for dimming applications in LED lighting systems.
• General Power Switching Applications: Effective in a variety of high-current switching applications.

Package Included:
1 x IRF640 TO220 MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!