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FQPF20N60 TO-220F 20A 600V N-Channel Power MOSFET

Availability:

20 in stock


The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.

රු130.00

20 in stock

Product Description: FQPF20N60 TO220F N-Channel MOSFET
The FQPF20N60 is a high-voltage N-channel MOSFET designed for power switching applications. It features advanced technology for enhanced performance, making it suitable for various applications such as power supplies, motor control, and industrial electronics.

Features

  • N-Channel Configuration: The FQPF20N60 operates as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
  • Voltage Ratings:
    Maximum Drain-Source Voltage (VDS): 600V
    Maximum Gate-Source Voltage (VGS): ?30V
  • Current Handling Capability:
    Maximum Drain Current (ID): 20A (limited by maximum junction temperature).
  • Power Dissipation:
    Maximum Power Dissipation (PD): Approximately 94W.
  • On-State Resistance:
    RDS(on) at VGS = 10V: Typically around 190 m?.
  • Gate Charge Characteristics:
    Total Gate Charge (Qg): Approximately 75 nC.

Applications
The FQPF20N60 TO220F is utilized in various applications:

  • Power Supplies: Ideal for use in switch-mode power supplies where high efficiency and low conduction losses are required.
  • Motor Control Circuits: Suitable for controlling motors in various electronic devices.
  • General Power Switching Applications: Effective in high-voltage switching scenarios, including AC to DC converters and power factor correction circuits.

Package Included:
1 x FQPF20N60 TO220F N-Channel MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!

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