Product Description: FQPF20N60 TO220F N-Channel MOSFET
The FQPF20N60 is a high-voltage N-channel MOSFET designed for power switching applications. It features advanced technology for enhanced performance, making it suitable for various applications such as power supplies, motor control, and industrial electronics.
Features
- N-Channel Configuration: The FQPF20N60 operates as an N-channel MOSFET, allowing for efficient switching and amplification of electrical signals.
- Voltage Ratings:
Maximum Drain-Source Voltage (VDS): 600V
Maximum Gate-Source Voltage (VGS): ?30V - Current Handling Capability:
Maximum Drain Current (ID): 20A (limited by maximum junction temperature). - Power Dissipation:
Maximum Power Dissipation (PD): Approximately 94W. - On-State Resistance:
RDS(on) at VGS = 10V: Typically around 190 m?. - Gate Charge Characteristics:
Total Gate Charge (Qg): Approximately 75 nC.
Applications
The FQPF20N60 TO220F is utilized in various applications:
- Power Supplies: Ideal for use in switch-mode power supplies where high efficiency and low conduction losses are required.
- Motor Control Circuits: Suitable for controlling motors in various electronic devices.
- General Power Switching Applications: Effective in high-voltage switching scenarios, including AC to DC converters and power factor correction circuits.
Package Included:
1 x FQPF20N60 TO220F N-Channel MOSFET. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!
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