2SD847 TO-3P NPN 600V 3A Transistor

The 2SD847 TO3P NPN Transistor is a high-performance silicon-based bipolar junction transistor designed for high-voltage and high-current applications. With a maximum collector-emitter voltage of 600V and a collector current rating of 3A, this transistor is ideal for power amplification and switching in various electronic circuits. Packaged in a TO-3P format, it allows for efficient heat dissipation and easy integration into electronic designs.

Features:

• Type: NPN bipolar junction transistor (BJT).
• Voltage Ratings: Maximum collector-emitter voltage (VCE) of 600V and maximum collector-base voltage (VCB) of 700V.
• Current Rating: Capable of handling continuous collector current (IC) up to 3A.
• Power Dissipation: Maximum power dissipation of 40W, making it suitable for high-power applications.
• Gain Characteristics: Forward current transfer ratio (hFE) typically ranging from 40 to 250, ensuring effective amplification.
• Transition Frequency: Transition frequency (fT) of up to 10 MHz, enabling high-speed switching capabilities.
• Operating Temperature: Designed to operate within a junction temperature range of -55°C to +150°C.

Applications:
The 2SD847 TO3P transistor is commonly used in:

• Power Amplifiers: Ideal for driving high-power audio amplifiers and other power applications.
• Switching Circuits: Suitable for relay drivers and various high-current switching applications in industrial electronics.
• High Voltage Applications: Effective in applications requiring reliable performance under high voltage conditions.

Package Included: 1 x 2SD847 TO3P NPN Transistor 600V 3A. Please note that the product image is for illustrative purposes only. The actual product may vary slightly in appearance!