power semiconductor switching device
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IGBT, Semiconductors, Transistors
RJP63F3 TO220F 630V 40A IGBT
The RJP63F3 TO220F 630V 40A N-Channel IGBT is a high-performance power transistor designed for efficient power switching in motor drives, inverters, and power supplies. With low conduction losses, fast switching, and high current handling, it is ideal for high-power, energy-efficient applications.
SKU: 2001799 -
IGBT, Semiconductors, Transistors
H20R1202 TO247 1200V 20A IGB with Monolithic Body Diode
The H20R1202 TO247 1200V 20A IGBT with Monolithic Body Diode is a high-voltage, high-current IGBT designed for efficient switching in motor drives, inverters, power supplies, and renewable energy systems. It features a Monolithic Body Diode for fast recovery and protection, ensuring reliable operation in demanding power applications.
SKU: 2001804

