Showing 1–25 of 32 results
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The HY1506 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability and excellent thermal performance, it is ideal for synchronous rectification, motor control circuits, and general-purpose applications.
The HY1707 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability and excellent thermal performance, it is ideal for power management systems, inverter circuits, and general-purpose applications.
The HY1906 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of 188W and excellent thermal performance, it is ideal for power management systems, synchronous rectification, and general-purpose applications.
The HY1908 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of around 150W and excellent thermal performance, it is ideal for power management systems, inverter circuits, and general-purpose applications.
The HY3410 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability of 285W and excellent thermal performance, it is ideal for synchronous rectification, motor control circuits, and general-purpose applications.
The HY3506 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation capability and excellent thermal performance, it is ideal for power management systems, switching power supplies, and general-purpose applications.
The IRF054 TO66 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 100W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF1010 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 200W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF1404 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 333W and excellent thermal performance, it is ideal for DC to DC converters, power supplies, and motor driver circuits.
The?IRF1405 TO220?is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 330W and excellent thermal performance, it is ideal for automotive systems, power supplies, and motor control circuits.
The IRF3205 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 200W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and inverter applications.
The IRF530 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 79W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF540 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 150W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF640 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 125W and excellent thermal performance, it is ideal for power supplies, motor control, and general switching applications.
The IRF730 TO220 is a robust N-channel MOSFET designed for high-voltage applications. With a maximum power dissipation of 74W and excellent thermal performance, it is ideal for switched mode power supplies, motor control circuits, and general switching applications.
The IRF740 TO220 is a robust N-channel MOSFET designed for high-voltage and high-current applications. With a maximum power dissipation of 125W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and general-purpose applications.
The IRF840 TO220 is a robust N-channel MOSFET designed for high-voltage applications. With a maximum power dissipation of 125W and excellent thermal performance, it is ideal for switching power supplies, motor control circuits, and inverter applications.
2SD1145 / D1145 TO-92 High-Current Driver Application 
D966 TO92 Silicon NPN Epitaxial Planer Type (For low-frequency power amplification) 
LM386 SOP – Low Voltage Audio Amplifier IC 
D965 T092 NPN Transistor 
