GT30J127 IGBT
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IGBT, MOSFET Transistors, Semiconductors, Transistors
GT30J127 TO220F 600V 200A IGBT MOSFET
The GT30J127 TO220F 600V 200A IGBT MOSFET is a high-power switching device designed for efficient motor control, inverters, and power supplies. With a 600V voltage rating and 200A current capacity, it delivers low conduction losses and fast switching for energy-efficient operation in demanding applications.
SKU: 2001791
10kΩ / 10kOhm 9 Pin Thru Hole Vertical Resistor Array
FQA19N60 /19N60 600V N-Channel TO-3PIN MOSFET
2P6M ORIGINAL 600V 2A Type-AY SCR Thyristor
A614 TO-220 Silicon PNP Power Transistor 