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The BD139 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 80V. With a maximum collector current rating of up to 1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD138 TO-126 is a robust PNP transistor designed for medium-voltage applications with a maximum collector-emitter voltage of -60V. With a maximum collector current rating of up to -1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD131 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 3A and a power dissipation capability of approximately 11W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BC559 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -30V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC558 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -45V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC557 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -45V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC556 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -65V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC548 TO-92 is a compact NPN transistor designed for general-purpose applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC547 TO-92 is a compact NPN transistor designed for general-purpose applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC546 TO-92 is a compact NPN transistor designed for high-frequency applications with a maximum collector-emitter voltage of 65V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The TIP32 TO220 is a robust PNP power transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 100V. With a maximum collector current rating of up to 3A and a power dissipation capability of approximately 40W, it is ideal for power switching, amplification, and motor control tasks in electronic devices.
The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N80 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 800V. With a maximum power dissipation capability of approximately 94W and a drain current rating of up to 6A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 4N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation of approximately 33W and a drain current rating of up to 4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The?TIP31 TO220?is a robust NPN power transistor designed for medium-voltage and current applications. With a maximum power dissipation of approximately 40W and a collector current rating of up to 3A, it is ideal for audio amplification, switching tasks, and general-purpose applications in electronic devices.
The TIP42 TO220 is a robust PNP power transistor designed for medium-voltage and current applications. With a maximum power dissipation of approximately 65W and a collector current rating of up to 6A, it is ideal for audio amplification and general-purpose tasks in electronic devices.
The TIP41 TO220 is a robust NPN power transistor designed for medium voltage and current applications. With a maximum power dissipation of approximately 65W and a collector current rating of up to 6A, it is ideal for audio amplification and general-purpose tasks in electronic devices.
The TIP2955 TO247 is a robust PNP power transistor designed for high-voltage and high-current applications. With a maximum power dissipation of approximately 90W and a collector current rating of up to 15A, it is ideal for audio amplification, power switching, and general-purpose tasks in electronic devices.
The TIP3055 TO247 is a robust NPN power transistor designed for high-voltage and high-current applications. With a maximum power dissipation of approximately 90W and a collector current rating of up to 15A, it is ideal for audio amplification and general-purpose tasks in electronic devices.
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