Semiconductors

The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.

The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.

The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.

The 6N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 6.2A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.