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The LM741 DIP is a versatile operational amplifier capable of operating over a wide voltage range with high gain and low bias current. It is ideal for various applications, including signal conditioning and active filtering.
The LM318 DIP is a high-speed operational amplifier capable of operating over a wide voltage range with a slew rate of 70 V/?s and a gain of up to 200 V/mV. It is ideal for various applications, including signal conditioning and active filtering.
The LM317 TO-220 is an adjustable voltage regulator capable of supplying up to 1.5A with an output voltage range of 1.2V to 37V. It features built-in thermal and short-circuit protection, making it suitable for various applications in power management.
The BD140 TO-126 is a robust PNP transistor designed for medium-voltage applications with a maximum collector-emitter voltage of -80V. With a maximum collector current rating of up to -1.5A and a power dissipation capability of approximately 12.5W, it is ideal for audio amplification and general-purpose switching tasks in electronic devices.
The BD137 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 60V. With a maximum collector current rating of up to 1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD136 TO-126 is a robust PNP transistor designed for medium-voltage applications with a maximum collector-emitter voltage of -45V. With a maximum collector current rating of up to -1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD135 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD139 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 80V. With a maximum collector current rating of up to 1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD138 TO-126 is a robust PNP transistor designed for medium-voltage applications with a maximum collector-emitter voltage of -60V. With a maximum collector current rating of up to -1.5A and a power dissipation capability of approximately 12.5W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BD131 TO-126 is a robust NPN transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 3A and a power dissipation capability of approximately 11W, it is ideal for medium power amplification and general-purpose switching tasks in electronic devices.
The BC559 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -30V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC558 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -45V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC557 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -45V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC556 TO-92 is a compact PNP transistor designed for general-purpose applications with a maximum collector-emitter voltage of -65V. With a maximum collector current rating of up to -100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC548 TO-92 is a compact NPN transistor designed for general-purpose applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC547 TO-92 is a compact NPN transistor designed for general-purpose applications with a maximum collector-emitter voltage of 45V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The BC546 TO-92 is a compact NPN transistor designed for high-frequency applications with a maximum collector-emitter voltage of 65V. With a maximum collector current rating of up to 100mA and a power dissipation capability of approximately 500mW, it is ideal for low-noise amplification and small-signal switching tasks in electronic devices.
The TIP32 TO220 is a robust PNP power transistor designed for medium-voltage applications with a maximum collector-emitter voltage of 100V. With a maximum collector current rating of up to 3A and a power dissipation capability of approximately 40W, it is ideal for power switching, amplification, and motor control tasks in electronic devices.
The FQPF20N60 TO220F is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 20A and an on-state resistance of approximately 190 m?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 9N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum drain current rating of up to 8.5A and an on-state resistance of approximately 1.0?, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 147W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 8N50 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 500V. With a maximum power dissipation capability of approximately 125W and a drain current rating of up to 8A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 7N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 142W and a drain current rating of up to 7.4A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 6N80 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 800V. With a maximum power dissipation capability of approximately 94W and a drain current rating of up to 6A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
The 5N60 TO220 is a robust N-channel MOSFET designed for high-voltage applications with a maximum drain-source voltage of 600V. With a maximum power dissipation capability of approximately 100W and a drain current rating of up to 5A, it is ideal for power supplies, motor control, and general-purpose switching tasks in electronic devices.
NE555 DIP Precision Timer IC 
L293 Motor Driver Module 
FS8205A MSOP8 N-Channel Dual MOSFET 4.5V 4A 
